 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features * High breakdown voltage VCBO = 1500 V * High speed switching tf = 0.15 sec(typ.) at fH=64kHz Outline TO-3PFM 1 2 3 1. Base 2. Collector 3. Emitter 2SC5470 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 700 6 20 40 150 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) Item Collector to emitter breakdown voltage Symbol V(BR)CEO Min 700 6 -- 10 3.5 -- -- -- -- Typ -- -- -- -- -- -- -- 0.2 0.15 Max -- -- 500 40 6.5 5 1.5 0.4 -- V V s s Unit V V A Test Conditions I C = 10mA, RBE = * I E = 10mA, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 10A I C = 12A, IB = 4A I C = 12A, IB = 4A I CP = 8A, IB1= 3A f H = 31.5kHz I CP = 8A, IB1= 2A f H = 64kHz Emitter to base breakdown voltage V(BR)EBO Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage I CES hFE1 hFE2 VCE(sat) Base to emitter saturation voltage VBE(sat) Fall time Fall time tf tf 2 2SC5470 Main Characteristics Collector Power Dissipation vs. Temperature Pc (W) 200 I C (A) 50 20 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (C) 200 Area of Safe Operaion Collector Power Dissipation 150 100 50 Collector Current 0.1 100 5000 1000 10 Collector to Emitter Voltage VCE (V) L = 180 H I B2 = -1 A duty < 1 % Tc = 25C Typical Output Characteristics 10 I C (A) 2.0 A A 1.8 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A DC Current Transfer Ratio vs. Collector Current 100 h FE 50 20 10 5 2 VCE = 5 V 1 2 5 10 0.1 0.2 0.5 1 Collector Current I C (A) Tc = -25 C 25 C 75 C 5 0.6 A 0.4 A 0.2 A Tc = 25 C 0 5 IB=0 10 DC Current Transfer Ratio Collector Current 20 Collector to Emitter Voltage V CE (V) 3 2SC5470 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 Base to Emitter Saturation Voltage V BE(sat) (V) IC / I B= 3 5 2 1 25 C 75 C 10 I C/ I B= 3 5 2 Tc = -25C 1 0.5 0.2 25 C 75 C Base to Emitter Saturation Voltage vs. Collector Current 0.5 0.2 0.1 Tc = -25 C 2 5 10 0.5 1 Collector Current I C (A) 20 0.05 0.1 0.2 0.1 2 5 10 0.2 0.5 1 Collector Current I C (A) 20 Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage V CE(sat) (V) 10 I C= 6 A 8A 5 Fall Time t f (s) 0.6 0.8 Fall Time vs. Base Current I CP = 8 A f H = 64 kHz Tc = 25C 0.4 10 A 0.2 Tc = 25C 0 0.1 0.2 0.5 1 Base Current 2 I B (A) 5 10 0 0.6 1.0 1.4 1.8 2.2 2.6 3.0 Base Current I B1 (A) 4 2SC5470 Storage Time vs. Base Current 8 I CP = 8 A f H = 64 kHz Tc = 25C Storage Time tstg (s) 6 4 2 0 0.6 1.0 1.4 1.8 2.2 2.6 Base Current I B1 (A) 3.0 5 2SC5470 Package Dimensions (Unit: mm) 16.0 Max 3.2 5.0 0.3 5.8 Max 2.7 4.0 2.6 1.4 Max 1.6 1.4 Max 21.0 0.5 3.2 5.0 19.9 0.3 0.66 5.45 0.5 +0.2 -0.1 0.9 -0.1 +0.2 5.45 0.5 Hitachi Code EIAJ JEDEC TO-3PFM -- -- 6 2SC5470 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 7 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
Price & Availability of 2SC5470
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |